PECVD Processing of low bandgap-energy amorphous hydrogenated germanium-tin (a-GeSn:H) films for opto-electronic applications

نویسندگان

چکیده

An alloy based on the group IV elements germanium and tin has potential of yielding an earth-abundant low bandgap energy semiconductor material with applications in fields micro-electronics, optics, photonics photovoltaics. In this work, first steps towards plasma enhanced chemical vapour deposition (PECVD) processing a chemically stable, intrinsic GeSn:H are presented. Using tetramethyltin (TMT) precursor, over 70 PECVD processed films It was observed that opto-electrical film properties result phase fraction, void hydrogenation level carbon integration. particular, managing integration from TMT precursor into is crucial for obtaining low-bandgap stable materials. The collective findings work will aid successfully identifying pathways GeSn:H.

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ژورنال

عنوان ژورنال: Applied Materials Today

سال: 2022

ISSN: ['2352-9407', '2352-9415']

DOI: https://doi.org/10.1016/j.apmt.2022.101450